The NIR-enhanced Si-APD arrays we provide are mainly for MEMS and FLASH lidars, which can improve the system resolution while maintaining the performance of a single APD, effectively reducing interference. And there are a number of pixel sizes, arrangement and different packages to choose from, so that customers can choose the most suitable array solution before the final customization.
Application: MEMS/FLASH lidar.
| PN | Active Area | Dark Current | Bandwidth | Temperature Coefficient - Vbr | Max. Reverse Voltage | Package | Package Style | Pin Qty. | Window |
|---|---|---|---|---|---|---|---|---|---|
| IAG080S5 | Ø80 μm | 3 nA@M=10 | 2.5 GHz@M=10 | 0.075V/K@10μA | 66V@10μA | TO-46 | TO | 2 | - |
| IAG080S6 | Ø80 μm | 3 nA@M=10 | 2.5 GHz@M=10 | 0.075V/K@10μA | 66V@10μA | TO-46 | TO | 3 | - |
| IAG080S6L | Ø80 μm | 3 nA@M=10 | 2.5 GHz@M=10 | 0.075V/K@10μA | 66V@10μA | TO-46 | TO | 3 | - |
| IAG080S7 | Ø80 μm | 3 nA@M=10 | 2.5 GHz@M=10 | 0.075V/K@10μA | 66V@10μA | TO-46 | TO | 2 | - |
| IAG080T6 | Ø80 μm | 3 nA@M=10 | 2.5 GHz@M=10 | 0.075V/K@10μA | 66V@10μA | TO-37 | TO | 6 | - |
| IAG080T8 | Ø80 μm | 3 nA@M=10 | 2.5 GHz@M=10 | 0.075V/K@10μA | 66V@10μA | TO-8 | TO | 6 | - |
| IAG080Y1 | Ø80 μm | 3 nA@M=10 | 2.5 GHz@M=10 | 0.075V/K@10μA | 66V@10μA | Ceramic Submount | Special | 0 | - |
| IAG080S5(*) | - | - | - | - | - | - | - | - | - |
| IAE080S6 | Ø80 μm | 3 nA@M=10 | 1000 MHz@M=10 | 0.1V/K | 40 … 80V | TO-46 | TO | 3 | - |
| IAE200S5 | Ø80 μm | 10 nA@M=10 | 400 MHz@M=10 | 0.1V/K | 40 … 80V | TO-46 | TO | 2 | - |
| IAE200S6 | Ø80 μm | 10 nA@M=10 | 400 MHz@M=10 | 0.1V/K | 40 … 80V | TO-46 | TO | 3 | - |
| IAG200S6 | 200 μm | 25 nA@M=10 | 1000 MHz@M=10 | 0.075V/K@10μA | 60V@10μA | TO-46 | TO | 3 | - |
| IAG200S7 | 200 μm | 25 nA@M=10 | 1000 MHz@M=10 | 0.075V/K@10μA | 60V@10μA | TO-46 | TO | 2 | - |
| IAG200S7(*) | - | - | - | - | - | - | - | - | - |
| IAG200S7[WITH SILICON WINDOW] | 200 μm | 25 nA@M=10 | 1000 MHz@M=10 | 0.075V/K@10μA | 60V@10μA | TO-46 | TO | 2 | - |
| IAG350S6 | 350 μm | 50 nA@M=10 | 600 MHz@M=10 | 0.075V/K@10μA | 55V@10μA | TO-46 | TO | 3 | - |
| IAG350S7 | 350 μm | 50 nA@M=10 | 600 MHz@M=10 | 0.075V/K@10μA | 55V@10μA | TO-46 | TO | 2 | - |
| IAG200T8 | Ø200 μm | 25 nA@M=10 | 1.0 GHz@M=10 | 0.075V/K@10μA | 60V@10μA | TO-8 | TO | 6 | - |