CN

Infrared Detector

红外探测器覆盖0.8μm-100μm的所有探测,拥有高响应度和高信噪比,能通过多种制冷方式大幅降低噪声,
因此被广泛用于红外光谱、气体分析、火焰探测、温度传感与各类航天、军工和科学研究领域。

我们提供的红外探测器材料种类丰富,既包含Ge、PbS、PbSe、InAs、InSb、MCT等光子型探测器件,
也包含热释电、热电堆等热型探测器件。

InGaAs PD

GaAs-PD is a near-infrared photodiode, which can be used for optical communications, security, and light barriers. The products we provide include chips, built-in preamplifiers, arrays, etc., and we also provide color filters and optical fiber interface options.

PbS

Pump laser components include: laser pump lamp, laser pump cavity, laser resonant cavity, gain medium.

MCT

InSb detector is a photonic mid-wave infrared device with a spectral response range of 1μm-5.5μm. Compared with lead salt detectors such as PbS and PbSe, it has a wider spectrum, higher response speed and higher signal-to-noise ratio.
Application: gas analysis, spectrum analysis, radiometer, infrared microscopy, etc.

GaAs PD

The one-dimensional or two-dimensional array composed of multiple PD pixels, with high responsiveness consistency and low crosstalk among the pixels, is ideal for simultaneous capture of dynamic light spots or applications of multiple wavelengths, when reducing the center distance of the pixels, the average cost of a single pixel can come down.
Applications: spectrometers, spot position measurements, computed tomography, high speed photometers, and various medical and biochemical analytical instruments.