Si
| PN |
Active Area
|
Element Gap
|
Dark Current
|
Rise Time
|
Capacitance
|
Package Style
|
Package
|
Pin Qty.
|
Window
|
| SPOT-4D |
1.3 × 1.3 mm
|
0.127 mm
|
0.10 nA@-10V
|
22 ns@-10V,780nm,50Ω
|
5 pF@-10V
|
TO
|
TO-5
|
5
|
-
|
| SPOT-4DMI |
- | - | - | - | - | - | - | - | - |
| SPOT-9D |
Ø10 mm
|
0.102 mm
|
0.50 nA@-10V
|
33 ns@-10V,780nm,50Ω
|
60 pF@-10V
|
Special
|
Φ25.4 Low-Prof
|
5
|
-
|
| SPOT-9DMI |
Ø10 mm
|
0.010 mm
|
0.50 nA@-10V
|
28 ns@-10V,780nm,50Ω
|
60 pF@-10V
|
Special
|
Φ25.4 Low-Prof
|
5
|
-
|
| S-100-QD |
10 mm
|
m
|
1.0 nA@-10V
|
3 ns@-10V,850nm,50Ω
|
200 nF@0V
|
TO
|
TO-5
|
|
-
|
| QP1-6 TO52 |
Ø1.13 mm
|
16 μm
|
0.1 nA@-10V
|
20 ns@-10V,850nm,50Ω
|
0.75 pF@-10V
|
TO
|
TO-52
|
5
|
-
|
| QP5-6 TO5 |
2.52 mm
|
24 μm
|
0.2 nA
|
20 ns@-10V,850nm,50Ω
|
3 pF@-10V
|
TO
|
TO-5
|
5
|
-
|
| QP50-6 TO5 |
3.57 mm
|
28 μm
|
0.4 nA@-10V
|
20s@-10V,850nm,50Ω
|
5 pF@-10V
|
TO
|
TO-5
|
5
|
-
|
| QP20-6 TO8S |
5.05 mm
|
34 μm
|
1.0 nA@-10V
|
20 ns@-10V,850nm,50Ω
|
10 pF@-10V
|
TO
|
TO-8
|
6
|
-
|
| QP50-6 TO8S |
7.98 mm
|
42 μm
|
2.0 nA@-10V
|
40 ns@-10V,850nm,50Ω
|
20 pF@-10V
|
TO
|
TO-8
|
6
|
-
|
| QP50-6-18μ-TO8 |
7.98 mm
|
18 μm
|
2.0 nA@-10V
|
40 ns@-10V,850nm,50Ω
|
20 pF@-10V
|
TO
|
TO-8
|
6
|
-
|
| QP100-7-SMD |
10 × 10 mm
|
50 μm
|
2.5 nA@-10V
|
6 ns
|
25 pF@-10V
|
SMD
|
Ceramic SMD
|
10
|
-
|
| QP10-6 TO5 |
Ø3570 μm
|
28 μm
|
0.4 nA@-10V
|
20 ns@-10V,850nm,50Ω
|
5 pF@-10V
|
TO
|
TO-5
|
5
|
-
|
