InGaAs-PD is a near-infrared photodiode with low noise and high speed. The gap width is narrower than that of silicon, so the wavelength range is larger and the responsivity is higher. In addition to providing general-purpose devices with a cutoff wavelength of 1.7μm, we also provide extended devices with a starting wavelength of 0.5μm and a cutoff wavelength of 1.9μm, 2.2μm, 2.4μm and 2.6μm. The size of the photosensitive surface or the detector array can be selected according to the application needs.
| PN | Active Area | Responsivity-Specific | Package | Bandwidth | Package Style | Pin Qty. | Window |
|---|---|---|---|---|---|---|---|
| FCI-H125G-InGaAs-75 | Ø0.075 mm | 2500V/W | TO-46 | 900 MHz | TO | 4 | Lens |
| FCI-H250G-InGaAs-75 | Ø0.075 mm | 2500V/W | TO-46 | 1750 MHz | TO | 4 | Lens |
| FCI-H622M-InGaAs-75 | Ø0.075 mm | 16000V/W | TO-46 | 520 MHz | TO | 4 | Lens |
| FCI-H250G-INGAAS-70 | Ø70 μm | 2500V/W | TO-46 | 1750 MHz | TO | 4 | - |
| FCI-H155M-INGAAS-70 | Ø70 μm | 48000V/W | TO-46 | 110 MHz | TO | 4 | - |
| FCI-H622M-INGAAS-70 | Ø70 μm | 16000V/W | TO-46 | 520 MHz | TO | 4 | - |